2N5401Datasheet, Equivalent, Cross Reference SearchType Designator: 2N5401Material of Transistor: SiPolarity: PNPMaximum Collector Power Dissipation (Pc): 0.31WMaximum Collector-Base Voltage Vcb : 160VMaximum Collector-Emitter Voltage Vce : 150VMaximum Emitter-Base Voltage Veb : 5VMaximum Collector Current Ic max : 0.6AMax. Operating Junction Temperature (Tj): 135°CTransition Frequency (ft): 100MHzCollector Capacitance (Cc): 6pFForward Current Transfer Ratio (hFE), MIN: 60Noise Figure, dB: -Package: TO92. 2N5401Datasheet (PDF)1.1. Size:121K upd2N5401Amplifier TransistorsPNP SiliconFeatures.

1. Buku Persamaan Ic Dan Transistor Symbol Meaning
2. Buku Persamaan Ic Dan Transistor Symbol Images
3. Buku Persamaan Ic Dan Transistor Symbol In Excel

Buku Persamaan Ic Dan Transistor Symbol Meaning

These are Pb-Free Devices.RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25°C PD 625 mWDer1.2. Size:121K upd2N5401Amplifier TransistorsPNP SiliconFeatures. These are Pb-Free Devices.RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25°C PD 625 mWDer1.3.

Size:11K upd2N5401CSMDimensions in mm (inches).Bipolar PNP Device in a0.51 ± 0.10 Hermetically sealed LCC1(0.02 ± 0.004) 0.31rad.(0.012)Ceramic Surface Mount3Package for HighReliability Applications211.91 ± 0.10(0.075 ± 0.004)A0.31rad.Bipolar PNP Device.(0.012)3.05 ± 0.13(0.12 ± 0.005)1.40(0.055)1.02 ± 0.10max.VCEO = 150VA =(0.04 ± 0.001.4. Size:10K upd2N5401DCSMDimensions in mm (inches).Dual Bipolar PNP Devices in ahermetically sealedLCC2 Ceramic Surface MountPackage for High Reliability1.40 ± 0.152.29 ± 0.20 1.65 ± 0.13(0.055 ± 0.006)(0.09 ± 0.008) (0.065 ± 0.005)Applications2 314Dual Bipolar PNP Devices.A0.236 5rad.(0.009) V = 150VCEO6.22 ± 0.13 A = 1.27 ± 0.13I = 0.6AC(0.1.5. Size:432K upd2N5401HRHi-Rel PNP bipolar transistor 150 V, 0.5 ADatasheet - production dataFeatures3BVCEO 150 V11IC (max) 0.5 A223HFE at 10 V - 150 mA 60TO-18 LCC-33. Hermetic packages4.

ESCC and JANS qualified1. Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5401HR is a silicon planar PNP transistor1.6. Size:249K upd2N5401NSemiconductorSemiconductorPNP Silicon TransistorDescription. General purpose amplifier. High voltage applicationFeatures.

High collector breakdown voltage: VCBO = -160V, VCEO = -160V. Low collector saturation voltage: VCE(sat)=-0.5V(MAX.). Complementary pair with 2N5551NOrdering InformationType NO.

Marking Package Code2N5401N 2N5401 T1.7. Size:177K motorolaMOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon.2N5401.Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5400 2N5401 UnitCASE 29–04, STYLE 1TO–92 (TO–226AA)Collector–Emitter Voltage VCEO 120 150 VdcCollector–Base Voltage VCBO 130 160 VdcEmitter–Base Voltage VEB1.8. Size:52K philipsDISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistorProduct specification 2004 Oct 28Supersedes data of 1999 Apr 08Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING• Low current (max. 300 mA)PIN DESCRIPTION• High voltage (max. 150 V).1 collector2 baseAPPLICATIONS3 emitter• General pu1.9. Size:49K philipsDISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5401PNP high-voltage transistor1999 Apr 08Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationPNP high-voltage transistor 2N5401FEATURES PINNING• Low current (max. 300 mA)PIN DESCRIPTION• High voltage (max.

150 V).1 collector2 baseAPPLICATIONS3 emitter• General p1.10. Size:75K fairchildsemi2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings. TA = 25°C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VIC Co1.11. Size:53K samsung2N5401 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92• Collector-Emitter Voltage: VCEO= 150V• Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -150 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 625 mWJunc1.12. Size:80K central145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 • Fax: (631) 435-18241.13.

Size:275K mcc2N5401MCCTMMicro Commercial ComponentsELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)Characteristic Symbol Min Max UnitOFF CHARACTERISTICSCollector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc(IC = 1.0 mAdc, IB = 0) 150 —Collector–Base Breakdown Voltage V(BR)CBO Vdc(IC = 100 mAdc, IE = 0) 160 —Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc(IE = 10 mAdc, IC =1.14. Size:145K onsemi2N5401Amplifier TransistorsPNP SiliconFeatures• These are Pb-Free Devices.RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25°C PD 625 mWDerate ab1.15. Size:219K utcUNISONIC TECHNOLOGIES CO., LTD2N5401 PNP SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTRANSISTOR? FEATURES. Collector-emitter voltage:VCEO = -150V.

High current gain,? ORDERING INFORMATIONOrdering Number Pin AssignmentPackage PackingLead Free Halogen Free 1 2 32N5401L-x-AB3-R 2N5401G-x-AB3-R SOT-89 B C E Tape Reel2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box1.16. Size:250K auk2N5401PNP Silicon TransistorDescriptionPIN Connection. General purpose amplifierE.

High voltage applicationFeaturesB. High collector breakdown voltage:VCBO = -160V, VCEO = -160V. Low collector saturation voltage:CVCE(sat)=-0.5V(MAX.)TO-92. Complementary pair with 2N5551Ordering InformationType NO.

Marking Package Code2N5401 TO-921.17. Size:337K secos2N5401-0.6 A, -160 VPNP Plastic Encapsulated TransistorElektronische BauelementeRoHS Compliant ProductA suffix of “-C” specifies halogen & lead-freeTO-92FEATURESG HSwitching and amplification in high voltageApplications such as telephonyJLow current (max. 600mA) A DMillimeterREF.Min. Max.BHigh voltage (max. 160V)A 4.40 4.70B 4.30 4.71.18. Size:274K cdilContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401TO-92CBECBEHigh Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector -Ba1.19.

Size:32K kecSEMICONDUCTOR 2N5401TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURESHigh Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(M1.20. Size:33K kecSEMICONDUCTOR 2N5401STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES+2.93 0.20AB 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=-160V, VCEO=-150V 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=-50nA(Max.) @VCB=-120VJ 0.11.21. Size:32K kecSEMICONDUCTOR 2N5401CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURESHigh Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(1.22.

Buku Persamaan Ic Dan Transistor Symbol Images

Size:204K lge2N5401(PNP)TO-92 Bipolar TransistorsTO-921.EMITTER2. COLLECTORFeaturesSwitching and amplification in high voltageApplications such as telephonyLow current(max. 600mA)High voltage(max.160v)MAXIMUM RATINGS (TA=25?

Unless otherwise noted)Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -160 VVCEO1.23. Size:680K wietron2N5401PNP TransistorsTO-9211. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N5401UnitCollector-Emitter Voltage VCEO -150 VdcCollector-Base Voltage VCBO -160VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC600 mAdcTotal Device Dissipation T =25 C PD W0.625AJunction Temperature T 150j CStorage, Temperature Tstg1.24. Size:52K hsmcSpec. No.: HE6203HI-SINCERITYIssued Date: 1992.09.22Revised Date: 2005.01.20MICROELECTRONICS CORP.Page No.: 1/5H2N5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5401 is designed for general purpose applications requiring highbreakdown voltages.TO-92Features.

Complements to NPN Type H2N5551. High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))Ab1.25.

Buku Persamaan Ic Dan Transistor Symbol In Excel

Size:307K can-shengTO-92 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)TRANSISTOR (PNP)TRANSISTOR (PNP)2N5401 TRANSISTOR (PNP)FEATUREFEATUREFEATUREFEATURETO-92TO-92TO-92TO-92 Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Applications su1.26. Size:170K firstsiliconSEMICONDUCTOR2N5401TECHNICAL DATA2N5401 TRANSISTOR (PNP)B CFEATURESwitching and Amplification in High VoltageApplications such as TelephonyDIM MILLIMETERSLow Current(Max.

600mA)A 4.70 MAXEB 4.80 MAXGHigh Voltage(Max.160v) C 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) HJ 14.00 0.50+L 21.27. Size:225K firstsiliconSEMICONDUCTOR2N5401STECHNICAL DATAHigh Voltage TransistorFEATURE3We declare that the material of product compliance with RoHS requirements.21DEVICE MARKING AND ORDERING INFORMATIONDevice Marking ShippingSOT–232N5401S 2L 3000/Tape&ReelMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V – 150 VdcCEO3COLLECTORCollector–Base Voltage V CB1.28. Size:301K shenzhen-tuofeng-semiShenzhen Tuofeng Semiconductor Technology Co., LtdTO-92 Plastic-Encapsulate Transistors2N5401 TRANSISTOR (PNP)TO-92FEATURESwitching and amplification in high voltage1.EMITTERApplications such as telephony2.BASELow current(max. 600mA)High voltage(max.160v)3.COLLECTOR1 2 3MAXIMUM RATINGS (TA=25℃ unless otherwise noted)Symbol Parameter Value.

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